zxmn6a07f 60v sot23 n-channel enhancement mode mosfet summary description this new generation trench mosfet from zetex utilizes a unique structure combining the benefits of low on-state resistance with fast switching speed. features ? low on-resistance ? fast switching speed ? low threshold ? sot23 package applications ? dc-dc converters ? power management functions ? relay and solenoid driving ? motor control ordering information device marking 7n6 v (br)dss r ds(on) ( ) i d (a) 60 0.250 @ v gs = 10v 1.4 0.350 @ v gs = 4.5v 1.2 device reel size (inches) tape width (mm) quantity per reel ZXMN6A07FTA 7 8 3,000 d s g d top view s g product specification sales@twtysemi.com 1 of 3 4008-318-123 http://www.twtysemi.com
absolute maximum ratings notes: (a) for a device surface mounted on 25mm x 25mm fr4 pcb with high coverage of single sided 1oz copper, in still air conditions. (b) for a device surface mounted on fr4 pcb measured at t 5 sec. (c) repetitive rating - 25mm x 25mm fr4 pcb, d=0.02, pulse width 300 s - pulse width limited by maximum junction temperature. parameter symbol limit unit drain-source voltage v dss 60 v gate-source voltage v gs 20 v continuous drain current @ v gs = 10v; t amb =25c (b) i d 1.4 a @ v gs = 10v; t amb =70c (b) 1.1 @ v gs = 10v; t amb =25c (a) 1.2 pulsed drain current (c) i dm 6.9 a continuous source current (body diode) (b) i s 1a pulsed source current (body diode) (c) i sm 6.9 a power dissipation at t amb =25c (a) p d 625 mw linear derating factor 5 mw/c power dissipation at t amb =25c (b) p d 806 mw linear derating factor 6.4 mw/c operating and storage temperature range t j , t stg -55 to +150 c thermal resistance parameter symbol limit unit junction to ambient r ja 200 c/w junction to ambient r ja 155 c/w zxmn6a07f product specification sales@twtysemi.com 2 of 3 4008-318-123 http://www.twtysemi.com
electrical characteristics (at t amb = 25c unless otherwise stated) parameter symbol min. typ. max. unit conditions static drain-source breakdown voltage v (br)dss 60 v i d = 250 a, v gs =0v zero gate voltage drain current i dss 1 av ds = 60v, v gs =0v gate-body leakage i gss 100 na v gs =20v, v ds =0v gate-source threshold voltage v gs(th) 1.0 3.0 v i d = 250 a, v ds =v gs static drain-source on-state resistance (*) notes: (*) measured under pulsed conditions. pulse width 300 s; duty cycle 2%. r ds(on) 0.250 v gs = 10v, i d = 1.8a 0.350 v gs = 4.5v, i d = 1.3a forward transconductance (*)(?) g fs 2.3 s v ds = 15v, i d = 1.8a dynamic (?) input capacitance c iss 166 pf v ds = 40v, v gs =0v f=1mhz output capacitance c oss 19.5 pf reverse transfer capacitance c rss 8.7 pf switching (?) (?) (?) switching characteristics are independ ent of operating junction temperature. (?) for design aid only, not subject to production testing. turn-on-delay time t d(on) 1.8 ns v dd = 30v, v gs = 10v i d = 1.8a r g 6.0 rise time t r 1.4 ns turn-off delay time t d(off) 4.9 ns fall time t f 2.0 ns total gate charge q g 1.65 v ds = 30v, v gs = 5v i d = 1.8a total gate charge q g 3.2 nc v ds = 30v, v gs = 10v i d = 1.8a gate-source charge q gs 0.67 nc gate drain charge q gd 0.82 nc source-drain diode diode forward voltage (*) v sd 0.80 0.95 v t j =25c, i s = 0.45a, v gs =0v reverse recovery time (?) t rr 20.5 ns t j =25c, i f = 1.8a, di/dt=100a/ s reverse recovery charge (?) q rr 21.3 nc zxmn6a07f product specification sales@twtysemi.com 3 of 3 4008-318-123 http://www.twtysemi.com
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